Method for producing pillar-shaped semiconductor device

ABSTRACT

A method for producing a pillar-shaped semiconductor device includes forming, above a NiSi layer serving as a lower wiring conductor layer and connecting to an N +  layer of an SGT formed within a Si pillar, a first conductor W layer that extends through a NiSi layer serving as an upper wiring conductor layer and connecting to a gate TiN layer and that extends through a NiSi layer serving as an intermediate wiring conductor layer and connecting to an N +  layer; forming an insulating SiO 2  layer between the NiSi layer and the W layer; and forming a second conductor W layer so as to surround the W layer and have its bottom at the upper surface layer of the NiSi layer, to achieve connection between the NiSi layer and the NiSi layer.

CROSS REFERENCES TO RELATED APPLICATIONS

The present application is a continuation-in-part application of U.S.patent application Ser. No. 15/712,637, filed Sep. 22, 2017 and allowedNov. 1, 2018, which is a continuation application of PCT/JP2016/066151,filed Jun. 1, 2016, which claims priority to PCT/JP2015/078776, filedOct. 9, 2015. The contents of these applications are incorporated hereinby reference in their entirety.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates to a method for producing a pillar-shapedsemiconductor device.

2. Description of the Related Art

In these years, three-dimensional transistors have been used in LSI(Large Scale Integration). In particular, surrounding gate transistors(SGTs), which are pillar-shaped semiconductor devices, have beenattracting attention as semiconductor elements that provide highlyintegrated semiconductor devices. There has been a demand for anSGT-including semiconductor device that has a higher degree ofintegration and a higher performance.

Ordinary planar MOS transistors have a channel that extends in ahorizontal direction along the upper surface of the semiconductorsubstrate. By contrast, SGTs have a channel that extends in a directionperpendicular to the upper surface of the semiconductor substrate (forexample, refer to Japanese Unexamined Patent Application Publication No.2-188966 and Hiroshi Takato, Kazumasa Sunouchi, Naoko Okabe, AkihiroNitayama, Katsuhiko Hieda, Fumio Horiguchi, and Fujio Masuoka: IEEETransaction on Electron Devices, vol. 38, No. 3, pp. 573-578 (1991)).For this reason, compared with planar MOS transistors, SGTs enable anincrease in the density of semiconductor devices.

FIG. 5 is a schematic structural view of an N-channel SGT. A Si pillar100 of a P or i (intrinsic) conductivity type (hereafter, siliconsemiconductor pillars will be referred to as “Si pillars”) has, in itsupper and lower portions, N⁺ layers 101 a and 101 b one of whichfunctions as a source and the other one of which functions as a drain(hereafter, semiconductor regions containing a donor impurity at a highconcentration will be referred to as “N⁺ layers”). A portion of the Sipillar 100 between the N⁺ layers 101 a and 101 b, which function as asource and a drain, functions as a channel region 102. Around thischannel region 102, a gate insulating layer 103 is formed. Around thisgate insulating layer 103, a gate conductor layer 104 is formed. In theSGT, the N⁺ layers 101 a and 101 b functioning as the source and thedrain, the channel region 102, the gate insulating layer 103, and thegate conductor layer 104 are formed so as to constitute a pillar. Thus,in plan view, the area occupied by the SGT corresponds to the areaoccupied by a single source-or-drain N⁺ layer of a planar MOStransistor. Therefore, compared with a circuit chip including a planarMOS transistor, an SGT-including circuit chip enables a furtherreduction in the size of the chip.

In the SGT illustrated in FIG. 5, a single SGT is formed within a singleSi pillar. Alternatively, plural SGTs may be formed so as to be stackedwithin a single Si pillar. In this case, wiring conductor layers thatare connected to the source/drain semiconductor regions and the gateconductor layers of SGTs and that are formed at the same heights in theperpendicular direction as the source/drain semiconductor regions,overlap in plan view. In a final step of forming the SGT circuit, thewiring conductor layers need to be connected, via contact holes formedon the wiring conductor layers, to wiring metal layers formed above thewiring conductor layers. For this reason, in order to achieve anincrease in the degree of integration of an SGT circuit, how to formwiring conductor layers, contact holes, and wiring metal layers isimportant.

SUMMARY OF THE INVENTION

There has been a demand for a pillar-shaped semiconductor device havinga higher density.

A method for producing a pillar-shaped semiconductor device according toa first aspect of the present invention includes:

a step of providing a stack structure including a semiconductorstructure including at least one semiconductor pillar formed on asubstrate so as to be perpendicular to a surface of the substrate, agate insulating layer formed so as to surround an outer periphery of theat least one semiconductor pillar, a gate conductor layer formed so asto surround the gate insulating layer, a first impurity region connectedto the at least one semiconductor pillar, and a second impurity regionconnected to the at least one semiconductor pillar so as to be separatedfrom the first impurity region, and

a first wiring conductor layer, a second wiring conductor layer, and athird wiring conductor layer that individually connect to any one of thegate conductor layer, the first impurity region, and the second impurityregion of the at least one semiconductor pillar, that extend in ahorizontal direction along the surface of the substrate, that at leastpartially overlap in plan view, and that are present in this order froma lower level to a higher level;

a step of forming a first contact region that extends through the thirdwiring conductor layer and the second wiring conductor layer to an uppersurface or inside of the first wiring conductor layer;

a step of forming a first tubular insulating layer in a portion that ison a side surface of the first contact region and is on a side surfaceof the second wiring conductor layer;

a step of filling the first contact region to form a first conductorlayer;

a step of exposing a top portion of the first conductor layer andsubsequently forming a first material layer so as to surround the topportion of the first conductor layer;

a step of forming a first insulating layer over an entirety of the stackstructure, and subsequently planarizing upper surfaces of the firstconductor layer, the first material layer, and the first insulatinglayer so as to expose upper surfaces of the first conductor layer andthe first material layer;

a step of removing the first material layer;

a step of forming a second contact region, through the first insulatinglayer serving as a mask, so as to extend to an upper surface of thethird wiring conductor layer; and

a step of filling the second contact region to form a second conductorlayer.

The method for producing a pillar-shaped semiconductor device preferablyfurther includes a step of adjusting the first conductor layer and thesecond conductor layer such that a level of a surface of a top portionof the first conductor layer matches with a level of a surface of a topportion of the second conductor layer.

In the method for producing a pillar-shaped semiconductor device, thestep of forming the second conductor layer preferably includes filling aconductor material into the second contact region and depositing theconductor material on the first insulating layer, and subsequentlysubjecting the conductor material to a lithographic process and etchingto form a single layer that includes the second conductor layer and awiring conductor layer connecting to upper surfaces of the firstconductor layer and the second conductor layer.

The method for producing a pillar-shaped semiconductor device preferablyfurther includes:

a step of forming at least one third contact region that is formed, inplan view, in a position other than in the first contact region, thatextends downward beyond a surface of the first insulating layer, andthat connects to any one of the gate conductor layer, the first impurityregion, and the second impurity region;

a step of filling the at least one third contact region to form a thirdconductor layer formed of a conductor material that is the same as inthe first conductor layer; and

a step of adjusting the first conductor layer and the third conductorlayer such that a level of a surface of a top portion of the firstconductor layer matches with a level of a surface of a top portion ofthe third conductor layer.

The first wiring conductor layer, the second wiring conductor layer, andthe third wiring conductor layer are each preferably formed of metal oralloy or a semiconductor material layer containing acceptor or donorimpurity.

At least any one of the first wiring conductor layer, the second wiringconductor layer, and the third wiring conductor layer preferably has asingle-crystal semiconductor layer that connects to the side surface ofthe at least one semiconductor pillar and that contains acceptor ordonor impurity.

In plan view, a portion of an outer periphery of the first contact holeregion preferably overlaps at least any one of the first wiringconductor layer, the second wiring conductor layer, and the third wiringconductor layer.

The present invention provides a high-density pillar-shapedsemiconductor device.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is an SRAM cell circuit diagram that illustrates anSGT-including pillar-shaped semiconductor memory device according to afirst embodiment of the present invention.

FIG. 1B is an SRAM cell schematic structural view that illustrates anSGT-including pillar-shaped semiconductor memory device according to afirst embodiment.

FIGS. 2AA to 2AD are a plan view and sectional structural views thatillustrate a method for producing an SGT-including pillar-shapedsemiconductor device according to a first embodiment.

FIGS. 2BA to 2BD are a plan view and sectional structural views thatillustrate a method for producing an SGT-including pillar-shapedsemiconductor device according to a first embodiment.

FIGS. 2CA to 2CD are a plan view and sectional structural views thatillustrate a method for producing an SGT-including pillar-shapedsemiconductor device according to a first embodiment.

FIGS. 2DA to 2DD are a plan view and sectional structural views thatillustrate a method for producing an SGT-including pillar-shapedsemiconductor device according to a first embodiment.

FIGS. 2EA to 2ED are a plan view and sectional structural views thatillustrate a method for producing an SGT-including pillar-shapedsemiconductor device according to a first embodiment.

FIGS. 2FA to 2FD are a plan view and sectional structural views thatillustrate a method for producing an SGT-including pillar-shapedsemiconductor device according to a first embodiment.

FIGS. 2GA to 2GD are a plan view and sectional structural views thatillustrate a method for producing an SGT-including pillar-shapedsemiconductor device according to a first embodiment.

FIGS. 2HA to 2HD are a plan view and sectional structural views thatillustrate a method for producing an SGT-including pillar-shapedsemiconductor device according to a first embodiment.

FIGS. 2IA to 2ID are a plan view and sectional structural views thatillustrate a method for producing an SGT-including pillar-shapedsemiconductor device according to a first embodiment.

FIGS. 2JA to 2JD are a plan view and sectional structural views thatillustrate a method for producing an SGT-including pillar-shapedsemiconductor device according to a first embodiment.

FIGS. 2KA to 2KD are a plan view and sectional structural views thatillustrate a method for producing an SGT-including pillar-shapedsemiconductor device according to a first embodiment.

FIGS. 2LA to 2LD are a plan view and sectional structural views thatillustrate a method for producing an SGT-including pillar-shapedsemiconductor device according to a first embodiment.

FIGS. 2MA to 2MD are a plan view and sectional structural views thatillustrate a method for producing an SGT-including pillar-shapedsemiconductor device according to a first embodiment.

FIGS. 2NA to 2NE are a plan view and sectional structural views thatillustrate a method for producing an SGT-including pillar-shapedsemiconductor device according to a first embodiment.

FIGS. 2OA to 2OE are a plan view and sectional structural views thatillustrate a method for producing an SGT-including pillar-shapedsemiconductor device according to a first embodiment.

FIGS. 2PA to 2PE are a plan view and sectional structural views thatillustrate a method for producing an SGT-including pillar-shapedsemiconductor device according to a first embodiment.

FIGS. 2QA to 2QE are a plan view and sectional structural views thatillustrate a method for producing an SGT-including pillar-shapedsemiconductor device according to a first embodiment.

FIGS. 2RA to 2RE are a plan view and sectional structural views thatillustrate a method for producing an SGT-including pillar-shapedsemiconductor device according to a first embodiment.

FIGS. 2SA to 2SE are a plan view and sectional structural views thatillustrate a method for producing an SGT-including pillar-shapedsemiconductor device according to a first embodiment.

FIGS. 2TA to 2TE are a plan view and sectional structural views thatillustrate a method for producing an SGT-including pillar-shapedsemiconductor device according to a first embodiment.

FIGS. 2UA to 2UE are a plan view and sectional structural views thatillustrate a method for producing an SGT-including pillar-shapedsemiconductor device according to a first embodiment.

FIGS. 2VA to 2VE are a plan view and sectional structural views thatillustrate a method for producing an SGT-including pillar-shapedsemiconductor device according to a first embodiment.

FIGS. 2WA to 2WE are a plan view and sectional structural views thatillustrate a method for producing an SGT-including pillar-shapedsemiconductor device according to a first embodiment.

FIGS. 2XA to 2XE are a plan view and sectional structural views thatillustrate a method for producing an SGT-including pillar-shapedsemiconductor device according to a first embodiment.

FIGS. 3AA to 3AE are a plan view and sectional structural views thatillustrate a method for producing an SGT-including pillar-shapedsemiconductor device according to a second embodiment of the presentinvention.

FIGS. 3BA to 3BE are a plan view and sectional structural views thatillustrate a method for producing an SGT-including pillar-shapedsemiconductor device according to a second embodiment.

FIGS. 4AA to 4AE are a plan view and sectional structural views thatillustrate a method for producing an SGT-including pillar-shapedsemiconductor device according to a third embodiment of the presentinvention.

FIGS. 4BA to 4BE are a plan view and sectional structural views thatillustrate a method for producing an SGT-including pillar-shapedsemiconductor device according to a third embodiment.

FIGS. 4CA to 4CE are a plan view and sectional structural views thatillustrate a method for producing an SGT-including pillar-shapedsemiconductor device according to a third embodiment.

FIG. 5 is a schematic structural view of an existing SGT.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, methods for producing pillar-shaped semiconductor devicesaccording to embodiments of the present invention will be described withreference to drawings.

First Embodiment

Hereinafter, referring to FIGS. 1A, 1B, and 2AA to 2XE, a method forproducing an SGT-including pillar-shaped semiconductor device accordingto a first embodiment of the present invention will be described.

FIG. 1A illustrates a pillar-shaped semiconductor device according tothis embodiment, that is, an SRAM cell circuit including SGTs. This SRAMcell circuit includes two inverter circuits. One of the invertercircuits is constituted by a P-channel SGT Pc1 serving as a loadtransistor, and an N-channel SGT Nc1 serving as a drive transistor. Theother inverter circuit is constituted by a P-channel SGT Pc2 serving asa load transistor, and an N-channel SGT Nc2 serving as a drivetransistor. The gate of the P-channel SGT Pc1, the gate of the N-channelSGT Nc1, the drain of the P-channel SGT Pc2, and the drain of theN-channel SGT Nc2 are connected together. The gate of the P-channel SGTPc2, the gate of the N-channel SGT Nc2, the drain of the P-channel SGTPc1, and the drain of the N-channel SGT Nc1 are connected together.

As illustrated in FIG. 1A, the sources of the P-channel SGTs Pc1 and Pc2are connected to a power supply terminal Vdd. The sources of theN-channel SGTs Nc1 and Nc2 are connected to a ground terminal Vss.Selection N-channel SGTs SN1 and SN2 are disposed on both sides of thetwo inverter circuits. The gates of the selection N-channel SGTs SN1 andSN2 are connected to a word line terminal WLt. The source and drain ofthe selection N-channel SGT SN1 are connected to a bit line terminal BLtand the drains of the N-channel SGT Nc1 and the P-channel SGT Pc1. Thesource and drain of the selection N-channel SGT SN2 are connected to aninverted bit line terminal BLRt and the drains of the N-channel SGT Nc2and the P-channel SGT Pc2. Thus, the circuit including an SRAM cell(hereafter, referred to as an “SRAM cell circuit”) according to thisembodiment is constituted by, in total, six SGTs that are two P-channelSGTs Pc1 and Pc2 and four N-channel SGTs Nc1, Nc2, SN1, and SN2. ThisSRAM cell circuit is constituted by a circuit area C1, which isconstituted by the P-channel SGT Pc1 and the N-channel SGTs Nc1 and SN1,and a circuit area C2, which is constituted by the P-channel SGT Pc2 andthe N-channel SGTs Nc2 and SN2.

FIG. 1B is a schematic structural view of the SRAM cell circuitaccording to the first embodiment. This SRAM cell circuit is constitutedby three Si pillars SP1, SP2, and SP3.

In the Si pillar SP1, the P-channel SGT Pc1 in FIG. 1A is formed in anupper portion, and the P-channel SGT Pc2 in FIG. 1A is formed in a lowerportion. The P-channel SGTs Pc1 and Pc2 are isolated from each other bya SiO₂ layer Ox1, which is formed in an intermediate portion of the Sipillar SP1. The P-channel SGT Pc1 is constituted by a channel portion ofthe Si pillar SP1, a gate Gp1 surrounding this portion of the Si pillarSP1, and a drain P⁺ layer Pd1 and a source P⁺ layer Ps1, which arepresent over and under the gate Gp1 and within the Si pillar SP1. TheP-channel SGT Pc2 is constituted by a channel portion of the Si pillarSP1, a gate Gp2 surrounding this portion of the Si pillar SP1, and adrain P⁺ layer Pd2 and a source P⁺ layer Ps2, which are present over andunder the gate Gp2 and within the Si pillar SP1.

In the Si pillar SP2, the N-channel SGT Nc1 in FIG. 1A is formed in anupper portion, and the N-channel SGT Nc2 in FIG. 1A is formed in a lowerportion. The N-channel SGTs Nc1 and Nc2 are isolated from each other bya SiO₂ layer Ox2, which is formed in an intermediate portion of the Sipillar SP2. The N-channel SGT Nc1 is constituted by a channel portion ofthe Si pillar SP2, a gate Gn1 surrounding this portion of the Si pillarSP2, and a drain N⁺ layer Nd1 and a source N⁺ layer Ns1, which areformed over and under the gate Gn1 and within the Si pillar SP2. TheN-channel SGT Nc2 is constituted by a channel portion of the Si pillarSP2, a gate Gn2 surrounding this portion of the Si pillar SP2, and adrain N⁺ layer Nd2 and a source N⁺ layer Ns2, which are formed over andunder the gate Gn2 and within the Si pillar SP2.

In the Si pillar SP3, the N-channel SGT SN1 in FIG. 1A is formed in anupper portion, and the N-channel SGT SN2 in FIG. 1A is formed in a lowerportion. The N-channel SGTs SN1 and SN2 are isolated from each other bya SiO₂ layer Ox3, which is formed in an intermediate portion of the Sipillar SP3. The N-channel SGT SN1 is constituted by a channel portion ofthe Si pillar SP3, a gate Gs1 surrounding this portion of the Si pillarSP3, and a drain N⁺ layer Sd1 and a source N⁺ layer Ss1, which areformed over and under the gate Gs1 and within the Si pillar SP3. TheN-channel SGT SN2 is constituted by a channel portion of the Si pillarSP3, a gate Gs2 surrounding this portion of the Si pillar SP3, and adrain N⁺ layer Sd2 and a source N⁺ layer Ss2, which are formed over andunder the gate Gs2 and within the Si pillar SP3.

As illustrated in FIG. 1B, components positioned at the same heights areconnected to each other in the Si pillars SP1, SP2, and SP3.Specifically, the gates Gp1 and Gn1 are connected to each other; thedrain P⁺ layer Pd1, the drain N⁺ layer Nd1, and the drain N⁺ layer Sd1are connected together; the drain P⁺ layer Pd2, the drain N⁺ layer Nd2,and the drain N⁺ layer Sd2 are connected together; and the gates Gp2 andGn2 are connected to each other. Furthermore, the gates Gp1 and Gn1, thedrain P⁺ layer Pd2, the drain N⁺ layer Nd2, and the drain N⁺ layer Sd2are connected together; and the gates Gp2 and Gn2, the drain P⁺ layerPd1, the drain N⁺ layer Nd1, and the drain N⁺ layer Sd1 are connectedtogether.

As illustrated in FIG. 1B, the source P⁺ layers Ps1 and Ps2 in the Sipillar SP1 are connected to the power supply terminal Vdd; the source N⁺layers Ns1 and Ns2 in the Si pillar SP2 are connected to the groundterminal Vss; the source N⁺ layer Ss1 in the Si pillar SP3 is connectedto the bit line terminal BLt; the source N⁺ layer Ss2 in the Si pillarSP3 is connected to the inverted bit line terminal BLRt; and the gatesGs1 and Gs2 in the Si pillar SP3 are connected to the word line terminalWLt.

As illustrated in FIG. 1B, the circuit area C1 in the circuit diagram inFIG. 1A is formed in an upper portion of the Si pillars SP1, SP2, andSP3, and the circuit area C2 in the circuit diagram in FIG. 1A is formedin a lower portion of the Si pillars SP1, SP2, and SP3. Components atthe same heights in the Si pillars SP1, SP2, and SP3 are connected toeach other without a vertical connection path between Si pillars.Specifically, the gates Gp1 and Gn1 are connected to each other withouta vertical connection path between the Si pillars SP1 and SP2; the drainP⁺ layer Pd1 and the drain N⁺ layers Nd1 and Sd1 are connected togetherwithout vertical connection paths between the Si pillars SP1, SP2, andSP3; the drain P⁺ layer Pd2 and the drain N⁺ layers Nd2 and Sd2 areconnected together without vertical connection paths between the Sipillars SP1, SP2, and SP3; similarly, the gates Gp2 and Gn2 areconnected to each other without a vertical connection path between theSi pillars SP1 and SP2. By contrast, the connection of the gates Gp1 andGn1 to the drain P⁺ layer Pd2 and the drain N⁺ layer Nd2 needs to beformed via a vertical connection wiring path. Similarly, the connectionof the gates Gp2 and Gn2 to the drain P⁺ layer Pd1 and the drain N⁺layer Nd1 is formed via a vertical connection wiring path.

FIGS. 2AA to 2AD are a plan view and sectional views for illustrating astep for producing an SRAM cell circuit that is an SGT-includingpillar-shaped semiconductor device. Among FIG. 2AA to FIG. 2XD, figuressuffixed with A are plan views; figures suffixed with B are sectionalstructural views taken along lines X-X′ in the corresponding figuressuffixed with A; figures suffixed with C are sectional structural viewstaken along lines Y1-Y1′ in the corresponding figures suffixed with A;and figures suffixed with D are sectional structural views taken alonglines Y2-Y2′ in the corresponding figures suffixed with A.

As illustrated in FIGS. 2AA to 2AD, on a SiO₂ layer substrate 1, an ilayer 2, a SiO₂ layer 3, an i layer 4, and a SiO₂ layer 5 are formed soas to be stacked.

Subsequently, as illustrated in FIGS. 2BA to 2BD, a lithographic processand an RIE (Reactive Ion Etching) process are carried out through aresist layer (not shown) serving as a mask to form SiO₂ layers 5 a, 5 b,and 5 c, which are circular in plan view. Subsequently, an RIE processis carried out through the resist layer and the SiO₂ layers 5 a, 5 b,and 5 c serving as masks to etch the i layer 4, the SiO₂ layer 3, andthe i layer 2 such that a lower layer of the i layer 2 is left on theSiO₂ layer substrate 1 to thereby form Si pillars 6 a, 6 b, and 6 c.Subsequently, the resist layer is removed. As a result, the Si pillar 6a is formed so as to include an i layer 2 b 1, a SiO₂ layer 3 a, an ilayer 4 a, and a SiO₂ layer 5 a; the Si pillar 6 b is formed so as toinclude an i layer 2 b 2, a SiO₂ layer 3 b, an i layer 4 b, and a SiO₂layer 5 b; and the Si pillar 6 c is formed so as to include an i layer 2b 3, a SiO₂ layer 3 c, an i layer 4 c, and a SiO₂ layer 5 c.

Subsequently, a lithographic process and an RIE process are carried outto etch the i layer 2 remaining as a lower layer, to thereby form an ilayer 2 a 1 in an outer peripheral portion around the Si pillar 6 a, ani layer 2 a 2 in an outer peripheral portion around the Si pillar 6 b,and an i layer 2 a 3 in an outer peripheral portion around the Si pillar6 c.

Subsequently, as illustrated in FIGS. 2CA to 2CD, for example, thermaloxidation is carried out, to thereby form SiO₂ layers 7 a, 7 b, and 7 con the outer peripheries of the Si pillars 6 a, 6 b, and 6 c and the ilayers 2 a 1, 2 a 2, and 2 a 3. Subsequently, a lithographic process andan ion implantation process are carried out such that a P⁺ layer 8 a isformed in the i layer 2 a 1 in the outer peripheral portion around theSi pillar 6 a, an N⁺ layer 8 b is formed in the i layer 2 a 2 in theouter peripheral portion around the Si pillar 6 b, and an N⁺ layer 8 cis formed in the i layer 2 a 3 in the outer peripheral portion aroundthe Si pillar 6 c. Subsequently, a SiO₂ layer 10 is formed so as tosurround lower portions of the Si pillars 6 a, 6 b, and 6 c and surroundthe i layers 2 a 1, 2 a 2, and 2 a 3.

Subsequently, as illustrated in FIGS. 2DA to 2DD, portions of the SiO₂layers 7 a, 7 b, and 7 c above the SiO₂ layer 10 are removed.Subsequently, a hafnium oxide (HfO₂) layer 11 and a titanium nitride(TiN) layer 12 are sequentially formed so as to cover the Si pillars 6a, 6 b, and 6 c and the SiO₂ layer 10 by, for example, ALD (Atomic LayerDeposition) processes. In the end, the HfO₂ layer 11 will function asgate insulating layers of SGTs; and the TiN layer 12 will function asgate conductor layers of SGTs.

Subsequently, as illustrated in FIGS. 2EA to 2ED, a lithographic processand an RIE process are carried out to form a TiN layer 12 a surroundingthe Si pillars 6 a and 6 b, and a TiN layer 12 b surrounding the Sipillar 6 c.

Subsequently, as illustrated in FIGS. 2FA to 2FD, a SiO₂ layer 14 isformed so as to cover the whole structure. Subsequently, a heattreatment is carried out to thermally diffuse the donor/acceptorimpurity atoms in the P⁺ layer 8 a and the N⁺ layers 8 b and 8 c to theentirety of the i layers 2 a 1, 2 a 2, and 2 a 3, to thereby form a P⁺layer 8 aa and N⁺ layers 8 bb and 8 cc. Subsequently, a silicon nitride(SiN) layer 15 is formed around the outer peripheries of the Si pillars6 a, 6 b, and 6 c. Subsequently, a resist layer 16 is formed on the SiNlayer 15. The resist layer 16 is formed such that the SiO₂ layers 3 a, 3b, and 3 c are positioned in the center portions (in the verticaldirection) of the resist layer 16. The resist layer 16 is formed in thefollowing manner: a resist material is applied to the Si pillars 6 a, 6b, and 6 c and the upper surface of the SiN layer 15; subsequently, aheat treatment at 200° C., for example, is carried out to enhance thefluidity of the resist material, so that the resist material isuniformly distributed around the Si pillars 6 a, 6 b, and 6 c and overthe SiN layer 15. Subsequently, a hydrogen fluoride gas (hereafter,referred to as an “HF gas”) is supplied to the whole structure.Subsequently, an environment of heating at 180° C., for example, isprovided, so that the HF gas is ionized due to moisture contained withinthe resist layer 16, to form hydrogen fluoride ions (HF₂ ⁺) (hereafter,referred to as “HF ions”). These HF ions diffuse through the resistlayer 16 to etch portions of the SiO₂ layer 14 that are in contact withthe resist layer 16 (regarding the mechanism of this etching, refer toTadashi Shibata, Susumu Kohyama and Hisakazu lizuka: “A New FieldIsolation Technology for High Density MOS LSI”, Japanese Journal ofApplied Physics, Vol. 18, pp. 263-267 (1979)). On the other hand, theother portions of the SiO₂ layer 14 that are not in contact with theresist layer 16 are substantially left without being etched.Subsequently, the resist layer 16 is removed.

As a result, as illustrated in FIGS. 2GA to 2GD, the SiO₂ layer 14 isdivided into a SiO₂ layer 14 a, which is covered by the SiN layer 15,and SiO₂ layers 14 b, 14 c, and 14 d, which are upper regions in the Sipillars 6 a, 6 b, and 6 c. Subsequently, the TiN layers 12 a and 12 bare etched through the SiO₂ layers 14 a, 14 b, 14 c, and 14 d and theSiN layer 15 serving as masks. As a result, the TiN layer 12 a isdivided into a TiN layer 18 a, which is in lower regions around the Sipillars 6 a and 6 b and covered by the SiN layer 15, a TiN layer 18 c,which is covered by the SiO₂ layer 14 b, and a TiN layer 18 d, which iscovered by the SiO₂ layer 14 c; and the TiN layer 12 b is divided into aTiN layer 18 b, which is in a lower region around the Si pillar 6 c andcovered by the SiN layer 15, and a TiN layer 18 e, which is covered bythe SiO₂ layer 14 d. Subsequently, the HfO₂ layer 11 is etched throughthe SiO₂ layers 14 a, 14 b, and 14 c and the TiN layers 18 a, 18 b, 18c, 18 d, and 18 e serving as masks. As a result, the HfO₂ layer 11 isdivided into a HfO₂ layer 11 a, which is in lower regions around the Sipillars 6 a, 6 b, and 6 c and covered by the TiN layers 18 a and 18 b,and HfO₂ layers 11 b, 11 c, and 11 d, which are in upper regions aroundthe Si pillars 6 a, 6 b, and 6 c and respectively covered by the TiNlayers 18 c, 18 d, and 18 e. Subsequently, an exposed portion of the TiNlayer 18 a around the Si pillar 6 a, an exposed portion of the TiN layer18 a around the Si pillar 6 b, and the exposed portions of the TiNlayers 18 b, 18 c, 18 d, and 18 e are oxidized to thereby form TiO(titanium oxide) layers 20 a, 20 b, 20 c, 20 d, 20 e, and 20 f.Subsequently, SiO₂ layers (not shown) are removed that are formed on theside surfaces of the Si pillars 6 a, 6 b, and 6 c during formation ofthe TiO layers 20 a, 20 b, 20 c, 20 d, 20 e, and 20 f.

Subsequently, as illustrated in FIGS. 2HA to 2HD, for example, a biassputtering process is carried out in the following manner: a substratemetal plate on which the SiO₂ layer substrate 1 is disposed and anopposite metal plate separated from the substrate metal plate areprepared; a direct-current voltage is applied to the substrate metalplate, and an RF voltage is applied across these two parallel metalplates, to thereby sputter the material atoms of the opposite metalplate onto the SiO₂ layer substrate 1. In this way, Ni atoms aredirected to, in a direction perpendicular to, the upper surface of theSiO₂ layer substrate 1, to thereby form a Ni layer 21 a on the SiN layer15. Similarly, bias sputtering processes are carried out to therebysequentially stack the following layers: a P-type poly-Si layer 22 acontaining boron (B) as an impurity, a SiO₂ layer 23 a, a Ni layer 21 b,a P-type poly-Si layer 22 b, and a SiO₂ layer 23 b. Incidentally, theSiO₂ layer 23 b is formed such that its upper surface is in contact withthe SiO₂ layers 14 b, 14 c, and 14 d, which cover upper portions of theSi pillars 6 a, 6 b, and 6 c. The Ni atoms, the poly-Si atoms, and theSiO₂ atoms are directed to, in a direction perpendicular to, the uppersurface of the SiO₂ layer substrate 1. As a result, sealed spaces 25 a,25 b, and 25 c are formed between the outer peripheral side surfaces ofthe Si pillars 6 a, 6 b, and 6 c and the Ni layers 21 a and 21 b, theP-type poly-Si layers 22 a and 22 b, and the SiO₂ layers 23 a and 23 b.Subsequently, stacked films (not shown) are removed that are formed overthe top of the Si pillars 6 a, 6 b, and 6 c during formation of thestacked films on the SiN layer 15 that are constituted by the Ni layers21 a and 21 b, the P-type poly-Si layers 22 a and 22 b, and the SiO₂layers 23 a and 23 b.

Subsequently, as illustrated in FIGS. 2IA to 2ID, a resist layer 27 isformed so as to cover the Si pillar 6 a. Subsequently, ion implantationof arsenic (As) atoms is carried out from above the upper surface of theSiO₂ layer substrate 1, to thereby turn the P-type poly-Si layers 22 aand 22 b in the outer peripheral portions around the Si pillars 6 b and6 c, into N⁺ layers. Thus, N⁺-type poly-Si layers 26 a and 26 b areformed. Subsequently, the resist layer 27 is removed.

Subsequently, as illustrated in FIGS. 2JA to 2JD, for example, a heattreatment at 550° C. is carried out, so that Ni atoms in the Ni layers21 a and 21 b are diffused into the P-type poly-Si layers 22 a and 22 band the N⁺-type poly-Si layers 26 a and 26 b, to thereby form nickelsilicide (NiSi) layers 28 a and 28 b. The NiSi layers 28 a and 28 b havevolumes expanded from the volumes of the P-type poly-Si layers 22 a and22 b and the N⁺-type poly-Si layers 26 a and 26 b (regarding thisexpansion in the volumes, refer to T. Morimoto, T. Ohguro, H. Sasaki, M.S. Momose, T. Iinuma, I. Kunishima, K. Suguro, I. Katakabe, H. Nakajima,M. Tsuchiaki, M. Ono, Y. Katsumata, and H. Iwai: “Self-AlignedNickel-Mono-Silicide Technology for High-Speed Deep Submicrometer LogicCMOS ULSI” IEEE Transaction on Electron Devices, Vol. 42, No. 5, pp.915-922 (1995)). Since the P-type poly-Si layers 22 a and 22 b and theN⁺-type poly-Si layers 26 a and 26 b are held between the SiN layer 15and the SiO₂ layers 23 a and 23 b, the NiSi layers 28 a and 28 b mainlyprotrude into the spaces 25 a, 25 b, and 25 c. The As atoms contained inthe N⁺-type poly-Si layers 26 a and 26 b and the B atoms contained inthe P-type poly-Si layers 22 a and 22 b are pushed outward in the NiSilayers 28 a and 28 b (regarding this push-out phenomenon, refer to T.Morimoto, T. Ohguro, H. Sasaki, M. S. Momose, T. Iinuma, I. Kunishima,K. Suguro, I. Katakabe, H. Nakajima, M. Tsuchiaki, M. Ono, Y. Katsumata,and H. Iwai: “Self-Aligned Nickel-Mono-Silicide Technology forHigh-Speed Deep Submicrometer Logic CMOS ULSI” IEEE Transaction onElectron Devices, Vol. 42, No. 5, pp. 915-922 (1995)). As a result ofthis impurity-atom push-out effect, protrusions (not shown) having highcontents of impurity atoms are formed in the surface layers of the sidesof the NiSi layers 28 a and 28 b, which protrude into the spaces 25 a,25 b, and 25 c. The side surfaces of the protrusions are in contact withthe surfaces of the Si pillars 6 a, 6 b, and 6 c.

Subsequently, as illustrated in FIGS. 2KA to 2KD, a heat treatment iscarried out to cause silicide expansion of the NiSi layers 28 a and 28b, and to diffuse, by the impurity push-out effect, from theprotrusions, As atoms and B atoms into the Si pillars 6 a, 6 b, and 6 c.As a result, NiSi layers 30 a, 30 b, and 30 c are respectively formed inthe surface layers of the sides of the Si pillars 6 a, 6 b, and 6 c incontact with the NiSi layer 28 a; and B atoms and As atoms are diffused,by the impurity push-out effect, into the Si pillars 6 a, 6 b, and 6 c,to thereby form a P⁺ layer 31 a and N⁺ layers 31 b and 31 c respectivelywithin the Si pillars 6 a, 6 b, and 6 c. Similarly, NiSi layers 32 a, 32b, and 32 c are respectively formed in the surface layers of the sidesof the Si pillars 6 a, 6 b, and 6 c in contact with the NiSi layer 28 b;and B atoms and As atoms are diffused, by the impurity push-out effect,into the Si pillars 6 a, 6 b, and 6 c, to thereby respectively form a P⁺layer 33 a and N⁺ layers 33 b and 33 c within the Si pillars 6 a, 6 b,and 6 c. In the SiO₂ layers 3 a, 3 b, and 3 c, thermal diffusion ofdonor and acceptor impurity atoms is suppressed and simultaneouslyformation of silicide is suppressed. As a result, the P⁺ layer 31 a andthe N⁺ layers 31 b and 31 c are isolated from the P⁺ layer 33 a and theN⁺ layers 33 b and 33 c by the SiO₂ layers 3 a, 3 b, and 3 c.Subsequently, a lithographic process and an RIE process are carried outto pattern the NiSi layers 28 a and 28 b and the SiO₂ layers 23 a and 23b so as to remain in the outer peripheral portions around the Si pillars6 a, 6 b, and 6 c. As a result, NiSi layers 28 aa and 28 bb and SiO₂layers 23 aa and 23 bb are formed.

Subsequently, as illustrated in FIGS. 2LA to 2LD, the same process as inthe formation of the SiN layer 15 is carried out to form a SiN layer 35such that its upper surface is positioned in the middle of (in theheight direction of) the TiN layers 18 c, 18 d, and 18 e. Subsequently,the same process as in the formation of the spaces 25 a, 25 b, and 25 cis carried out to form openings in the outer peripheries of the TiNlayers 18 c, 18 d, and 18 e. Subsequently, a NiSi layer 36 a in contactwith the TiN layers 18 c and 18 d, and a NiSi layer 36 b in contact withthe TiN layer 18 e are formed.

Subsequently, as illustrated in FIGS. 2MA to 2MD, a SiO₂ layer 37 isformed such that its upper surface is positioned higher than thesurfaces of the NiSi layers 36 a and 36 b and lower than the topportions of the Si pillars 6 a, 6 b, and 6 c. Subsequently, the SiO₂layers 14 b, 14 c, and 14 d, the TiN layers 18 c, 18 d, and 18 e, andthe HfO₂ layers 11 b, 11 c, and 11 d in the top portions of the Sipillars 6 a, 6 b, and 6 c are etched off through the SiO₂ layer 37serving as a mask. Subsequently, a lithographic process and an ionimplantation process are carried out with the SiO₂ layers 37, 14 b, 14c, and 14 d, the TiN layers 18 c, 18 d, and 18 e, and the HfO₂ layers 11b, 11 c, and 11 d serving as masks, such that boron (B) is ion-implantedinto the top portion of the Si pillar 6 a to form a P⁺ layer 38 a, andarsenic (As) is ion-implanted into the top portions of the Si pillars 6b and 6 c to form N⁺ layers 38 b and 38 c.

FIGS. 2NA to 2NE illustrate the following steps. Among FIG. 2NE to FIG.2XE, figures suffixed with E are sectional structural views taken alonglines Y3-Y3′ in the corresponding figures suffixed with A. A SiO₂ layer39 is formed so as to have a flat surface over the whole structure by aCVD process and a MCP process. Subsequently, a lithographic process andan RIE process are carried out to form a contact hole 40 a, whichextends through the SiO₂ layers 39 and 37, the NiSi layer 36 a, the SiNlayer 35, the SiO₂ layer 23 bb, the NiSi layer 28 bb, and the SiO₂ layer23 aa to the NiSi layer 28 aa. Similarly, a lithographic process and anRIE process are carried out to form a contact hole 40 b, which extendsthrough the SiO₂ layers 39 and 37, the SiN layer 35, the SiO₂ layer 23bb, the NiSi layer 28 bb, the SiO₂ layer 23 aa, the SiN layer 15, andthe SiO₂ layer 14 a to the TiN layer 18 a. In this case, the whole outerperiphery of the contact hole 40 a is not necessarily positioned withinthe NiSi layers 28 aa, 23 bb, and 36 a. Portions of the outer peripheryof the contact hole 40 a may connect to the NiSi layers 28 aa, 23 bb,and 36 a. Similarly, the whole outer periphery of the contact hole 40 bis not necessarily positioned within the NiSi layers 28 aa and 23 bb andthe TiN layer 18 a. Portions of the outer periphery of the contact hole40 b may connect to the NiSi layers 28 aa and 23 bb and the TiN layer 18a.

Subsequently, as illustrated in FIGS. 2OA to 2OE, a SiO₂ layer (notshown) is deposited over the whole structure by an ALD process.Subsequently, an RIE process is carried out to remove the SiO₂ layer onthe NiSi layer 28 aa while a SiO₂ layer 41 a is left on the side surfaceof the contact hole 40 a. Similarly, the SiO₂ layer on the TiN layer 18a is removed while a SiO₂ layer 41 b is left on the side surface of thecontact hole 40 b.

Subsequently, as illustrated in FIGS. 2PA to 2PE, an ALD process iscarried out over the whole structure to deposit a tungsten (W) layer(not shown) into the contact holes 40 a and 40 b and on the SiO₂ layer39. Subsequently, a MCP process is carried out to polish the surfacelayers of the W layer and the SiO₂ layer 39, to thereby form W layers 43a and 43 b such that the level of their upper surfaces matches with thelevel of the upper surface of the SiO₂ layer 39.

Subsequently, as illustrated in FIGS. 2QA to 2QE, an RIE process iscarried out to isotropically etch the SiO₂ layer 39. As a result of thisetching, the upper surface of the SiO₂ layer 39 is positioned above theP⁺ layer 38 a and N⁺ layers 38 b and 38 c; and the top portions of the Wlayers 43 a and 43 b protrude from the upper surface of the SiO₂ layer39. Subsequently, a CVD process is carried out to deposit a SiO₂ layer(not shown) over the whole structure. Subsequently, a CMP process and anRIE process are carried out to remove the SiO₂ layer over the SiO₂ layer39 while SiO₂ layers 46 a and 46 b are left on the side surfaces of theW layers 43 a and 43 b.

Subsequently, as illustrated in FIGS. 2RA to 2RE, a CVD process iscarried out to deposit, for example, an aluminum oxide (AlO) insulatinglayer (not shown) over the whole structure. Subsequently, a CMP processof planarization polishing is carried out such that the level of theupper surface of the AlO layer matches with the level of the uppersurfaces of the W layers 43 a and 43 b. Thus, an AlO layer 51 is formed.Subsequently, the SiO₂ layers 46 a and 46 b on the side surfaces of theW layers are removed.

Subsequently, as illustrated in FIGS. 2SA to 2SE, an RIE process iscarried out to etch, through the AlO layer 51 serving as a mask, theSiO₂ layers 39 and 37 on the outer periphery of the W layer 43 a and theSiO₂ layer 41 a, which is in contact with these layers. Thus, a contacthole 52 a is formed so as to extend to the NiSi layer 36 a. Similarly,etching is carried out, through the AlO layer 51 serving as a mask, onthe SiO₂ layers 39 and 37, the SiN layer 35, and the SiO₂ layer 23 bb onthe outer periphery of the W layer 43 b and the SiO₂ layer 41 b, whichis in contact with these layers. Thus, a contact hole 52 b is formed soas to extend to the NiSi layer 28 bb.

Subsequently, as illustrated in FIGS. 2TA to 2TE, an ALD process iscarried out to deposit a W layer (not shown) into the contact holes 52 aand 52 b and on the AlO layer 51. Subsequently, a CMP process is carriedout to polish the W layer and the AlO layer 51, to thereby form W layers43 aa and 54 aa such that the level of their upper surfaces matches withthe level of the upper surface of the SiO₂ layer 39. Similarly, W layers43 bb and 54 bb are formed such that the level of their upper surfacesmatches with the level of the upper surface of the SiO₂ layer 39.

Subsequently, as illustrated in FIGS. 2UA to 2UE, a wiring metal layer55 a, which connects to the W layers 43 aa and 54 aa, is formed on theSiO₂ layer 39. Similarly, a wiring metal layer 55 b, which connects tothe W layers 43 bb and 54 bb, is formed on the SiO₂ layer 39.

Subsequently, as illustrated in FIGS. 2VA to 2VE, a CVD process and aCMP process are carried out to form a SiO₂ layer 44 over the wholestructure. Subsequently, a contact hole 45 a is formed so as to extendthrough the SiO₂ layers 44 and 39 and the like to the P⁺ layer 38 a,which is in the top portion of the Si pillar 6 a; a contact hole 45 b isformed so as to extend to the N⁺ layer 38 b, which is in the top portionof the Si pillar 6 b; a contact hole 45 c is formed so as to extend tothe P⁺ layer 8 aa; and a contact hole 45 d is formed so as to extend tothe N⁺ layer 8 bb. Subsequently, a power supply wiring metal layer VDDis formed so as to connect to the P⁺ layers 38 a and 8 aa via thecontact holes 45 a and 45 c and so as to extend along line Y3-Y3′ inplan view. In addition, a ground wiring metal layer VSS is formed so asto connect to the N⁺ layers 38 b and 8 bb via the contact holes 45 b and45 d and so as to extend along line Y1-Y1′ in plan view.

Subsequently, as illustrated in FIGS. 2WA to 2WE, a CVD process and aCMP process are carried out to form a SiO₂ layer 46 over the wholestructure. Subsequently, a contact hole 47 is formed so as to extendthrough the SiO₂ layers 46, 44, 39, and 37, the NiSi layer 36 b, the SiNlayers 35 and 15, and the SiO₂ layer 14 a to the TiN layer 18 b.Subsequently, a word line wiring metal layer WL is formed so as toconnect the TiN layer 18 b and the NiSi layer 36 b to each other via thecontact hole 47 and so as to extend along line X-X′.

Subsequently, as illustrated in FIGS. 2XA to 2XE, a CVD process and aCMP process are carried out to form a SiO₂ layer 48 over the wholestructure. Subsequently, a contact hole 49 a is formed so as to extendthrough the SiO₂ layers 48, 46, 44, and 39 to the N⁺ layer 38 c, whichis in the top portion of the Si pillar 6 c; and a contact hole 49 b isformed so as to extend through the SiO₂ layers 48, 46, 44, 39, and 37,the SiN layers 35 and 15, the SiO₂ layer 14 a, the HfO₂ layer 11 a, andthe SiO₂ layers 10 and 7 c to the N⁺ layer 8 cc. Subsequently, a bitline wiring metal layer BL is formed so as to connect via the contacthole 49 a to the N⁺ layer 38 c and so as to extend along line Y2-Y2′ inplan view; and an inverted bit line wiring metal layer BLR is formed soas to connect via the contact hole 49 b to the N⁺ layer 8 cc and so asto extend along the bit line wiring metal layer BL in plan view.

As illustrated in FIGS. 2XA to 2XE, in an upper portion of the Si pillar6 a, an SGT (corresponding to the P-channel SGT Pc1 in FIG. 1B) isformed that includes the P⁺ layers 33 a and 38 a as the drain and thesource, includes the TiN layer 18 c as the gate, and includes, as thechannel, a region between the P⁺ layers 33 a and 38 a in the Si pillar 6a; and, in a lower portion of the Si pillar 6 a, an SGT (correspondingto the P-channel SGT Pc2 in FIG. 1B) is formed that includes the P⁺layers 8 aa and 31 a as the source and the drain, includes the TiN layer18 a as the gate, and includes, as the channel, a region between the P⁺layers 8 aa and 31 a in the Si pillar 6 a.

In addition, in an upper portion of the Si pillar 6 b, an SGT(corresponding to the N-channel SGT Nc1 in FIG. 1B) is formed thatincludes the N⁺ layers 38 b and 33 b as the source and the drain,includes the TiN layer 18 d as the gate, and includes, as the channel, aregion between the N⁺ layers 38 b and 33 b in the Si pillar 6 b; and, ina lower portion of the Si pillar 6 b, an SGT (corresponding to theN-channel SGT Nc2 in FIG. 1B) is formed that includes the N⁺ layers 8 bband 31 b as the source and the drain, includes the TiN layer 18 a as thegate, and includes, as the channel, a region between the N⁺ layers 8 bband 31 b in the Si pillar 6 a.

In addition, in an upper portion of the Si pillar 6 c, an SGT(corresponding to the N-channel SGT SN1 in FIG. 1B) is formed thatincludes the N⁺ layers 38 c and 33 c as the source and the drain,includes the TiN layer 18 e as the gate, and includes, as the channel, aregion between the N⁺ layers 38 c and 33 c in the Si pillar 6 c; and, ina lower portion of the Si pillar 6 c, an SGT (corresponding to theN-channel SGT Nc2 in FIG. 1B) is formed that includes the N⁺ layers 8 ccand 31 c as the source and the drain, includes the TiN layer 18 b as thegate, and includes, as the channel, a region between the N⁺ layers 8 ccand 31 c in the Si pillar 6 c.

These SGTs (corresponding to the SGTs Pc1, Pc2, Nc1, Nc2, SN1, and SN2in FIG. 1B) are connected together via wires to thereby provide an SRAMcell circuit constituted by, as in the schematic structural view in FIG.1B, a circuit area (corresponding to the circuit area C1 in FIG. 1B)including, in upper portions of the Si pillars 6 a, 6 b, and 6 c, aP-channel SGT (corresponding to the P-channel SGT Pc1 in FIG. 1B) andN-channel SGTs (corresponding to the N-channel SGTs Nc1 and SN1 in FIG.1B), and a circuit area (corresponding to the circuit area C2 in FIG.1B) including, in lower portions of the Si pillars 6 a, 6 b, and 6 c, aP-channel SGT (corresponding to the P-channel SGT Pc2 in FIG. 1B) andN-channel SGTs (corresponding to the N-channel SGTs Nc2 and SN2 in FIG.1B).

The production method according to the first embodiment provides thefollowing advantages.

1. The SiO₂ layer 41 a is formed on a side surface (facing the W layer43 aa) of the NiSi layer 28 bb. As a result, although the NiSi layers 28aa, 28 bb, and 36 a overlap in plan view, while insulation between the Wlayer 43 aa extending through these layers and the NiSi layer 28 bb isachieved, the W layer 43 aa enables connection between the NiSi layer 28aa and the NiSi layer 36 a. This enables a reduction in the area of theSRAM cell.

Similarly, the SiO₂ layer 41 c is formed on a side surface (facing the Wlayer 43 bb) of the NiSi layer 28 aa. As a result, although the TiNlayer 18 a and the NiSi layers 28 aa and 28 bb overlap in plan view,while insulation between the W layer 43 bb extending through theselayers and the NiSi layer 28 aa is achieved, the W layer 43 bb enablesconnection between the TiN layer 18 a and the NiSi layer 28 bb. Thisenables a reduction in the area of the SRAM cell.

2. In the structure including layers overlapping in plan view that arethe NiSi layer 28 aa as a lower wiring conductor layer, the NiSi layer28 bb as an intermediate wiring conductor layer, and the NiSi layer 36 aas an upper wiring conductor layer, the W layer 43 aa is formed so as toextend through the NiSi layers 28 bb and 36 a to the NiSi layer 28 aa,and have a top portion positioned above the NiSi layer 36 a. The W layer54 aa, which is formed so as to surround the outer periphery of the Wlayer 43 aa in a self-aligned manner without a special lithographicprocess, is connected to the upper surface of the NiSi layer 36 a. Thus,connections between the wiring metal layer 55 a and the NiSi layers 36 aand 28 aa are established.

3. In this embodiment, the P⁺ layer 8 aa and the N⁺ layers 8 bb and 8 ccof the lower SGTs each have a structure in which the source/drainimpurity region of the SGT and a wiring conductor layer are integrated.In this case, the wiring conductor layer is formed of single-crystal Sicontaining donor or acceptor impurity. Thus, the wiring conductor layermay be formed of a single-crystal layer containing donor or acceptorimpurity. Similarly, for the P⁺ layers 31 a, 32 a, 33 a, and 38 a andthe N⁺ layers 31 b, 31 c, 32 b, 32 c, 33 b, 33 c, 38 b, and 38 c, whichare formed in intermediate portions and top portions of the Si pillars 6a, 6 b, and 6 c, single-crystal layers containing donor or acceptorimpurity may be used for wiring conductor layers. In this case,single-crystal semiconductor layers formed of, for example, Si or SiGeand containing acceptor or donor impurity may be formed by, for example,a selective epitaxial crystal growth method so as to be in contact withthe Si pillars 6 a, 6 b, and 6 c. Incidentally, when such a wiringconductor layer that is a single-crystal layer containing donor oracceptor impurity is used, a first wiring conductor layer that is thissingle-crystal layer may be formed to connect to a second wiringconductor layer formed of metal or alloy, to form a wiring conductorlayer that is the combination of the first wiring conductor layer andthe second wiring conductor layer. When the single-crystal layerscontaining donor or acceptor impurity are used as wiring conductorlayers, the single-crystal layers containing donor or acceptor impuritythemselves serve as sources or drains without formation of, within theSi pillars 6 a, 6 b, and 6 c, the P⁺ layers 31 a, 32 a, 33 a, and 38 aand the N⁺ layers 31 b, 31 c, 32 b, 32 c, 33 b, 33 c, 38 b, and 38 c. Inthis way, as wiring conductor layers, single-crystal semiconductorlayers containing donor or acceptor impurity may be used to therebyincrease the density of an SGT-including circuit.

Similarly, in the structure including layers overlapping in plan viewthat are the TiN layer 18 a as a lower wiring conductor layer, the NiSilayer 28 aa as an intermediate wiring conductor layer, and the NiSilayer 28 bb as an upper wiring conductor layer, the W layer 43 bb isformed so as to extend through the NiSi layers 28 aa and 28 bb to theTiN layer 18 a, and have a top portion positioned above the NiSi layer28 bb. The W layer 54 bb, which is formed so as to surround the outerperiphery of the W layer 43 bb in a self-aligned manner without aspecial lithographic process, is connected to the upper surface of theNiSi layer 36 a. Thus, connections between the wiring metal layer 55 b,the NiSi layer 28 bb, and the TiN layer 18 a are established.

In this way, the W layer 43 aa and the W layer 54 aa are formed in aself-aligned manner, and the W layer 43 bb and the W layer 54 bb areformed in a self-aligned manner. This enables a high-density wiring ofthe SRAM cell.

In summary, the SRAM cell circuit area according to this embodimentincludes, in plan view, three Si pillars 6 a, 6 b, and 6 c, and ninecontact holes 40 a (in which the W layer 43 aa is buried), 40 b (inwhich the W layer 43 bb is buried), 45 a, 45 b, 45 c, 45 d, 47, 49 a,and 49 b. In general, when a single SGT is formed per semiconductorpillar, it is necessary to form at least three contacts (connections viacontact holes) from the source, the drain, and the gate to wiring metallayers. By contrast, in this embodiment, although two SGTs are formedper semiconductor pillar (Si pillar), the SRAM cell circuit is providedwith three contacts per semiconductor pillar. This enables ahigh-density SGT-including SRAM cell circuit. Therefore, in a circuitincluding pillar-shaped semiconductors such as SGTs, when wiringconductor layers connecting to nodes such as the source, the drain, andthe gate are formed so as to overlap in plan view and a wiring conductorlayer that needs to be insulated is present between wiring conductorlayers that are connected to each other, the connection between wiringconductor layers according to this embodiment enables an increase in thedensity of the circuit.

Second Embodiment

Hereinafter, with reference to FIG. 3AA to FIG. 3BE, a method forproducing an SGT-including pillar-shaped semiconductor device accordingto a second embodiment of the present invention will be described. AmongFIG. 3AA to FIG. 3BE, figures suffixed with A are plan views; figuressuffixed with B are sectional structural views taken along lines X-X′ inthe corresponding figures suffixed with A; figures suffixed with C aresectional structural views taken along lines Y1-Y1 ‘ in thecorresponding figures suffixed with A; figures suffixed with D aresectional structural views taken along lines Y2-Y2’ in the correspondingfigures suffixed with A; and figures suffixed with E are sectionalstructural views taken along lines Y3-Y3′ in the corresponding figuressuffixed with A. The production method according to the secondembodiment is the same as in the steps according to the first embodimentin FIGS. 2AA to 2XE except for the following differences.

The same steps as in FIG. 2AA to FIG. 2SE are carried out. Subsequently,as illustrated in FIGS. 3AA to 3AE, an ALD process is carried out todeposit a W layer (not shown) into the contact holes 52 a and 52 b andon the AlO layer 51. Subsequently, the W layer is polished by a CMPprocess so as to be left on the AlO layer 51. Thus, a W layer 60 isformed.

Subsequently, as illustrated in FIGS. 3BA to 3BE, a lithographic processand an RIE process are carried out to form a W layer 60 a, whichconnects to the outer periphery of the top portion of the W layer 43 a,and has the same shape as the wiring metal layer 55 a in FIGS. 2UA and2UC. Similarly, a W layer 60 b is formed, which connects to the outerperiphery of the top portion of the W layer 43 b, and has the same shapeas the wiring metal layer 55 b in FIGS. 2UA and 2UE. Subsequently, thesame steps as in FIG. 2VA to FIG. 2XE are carried out to thereby providethe same SRAM cell as in the first embodiment.

The production method for the SGT-including pillar-shaped semiconductordevice according to the second embodiment provides the followingadvantages.

In the first embodiment, the W layer 54 aa and the wiring metal layer 55a are separately formed. By contrast, in this embodiment, these layersare formed as a single layer that is the W layer 60 a. As a result, thenecessity of performing the metal layer deposition step for forming thewiring metal layer 55 a has been eliminated, so that the steps aresimplified, which is advantageous.

Third Embodiment

Hereinafter, with reference to FIG. 4AA to FIG. 4CE, a method forproducing an SGT-including pillar-shaped semiconductor device accordingto a third embodiment of the present invention will be described. AmongFIG. 4AA to FIG. 4CE, figures suffixed with A are plan views; figuressuffixed with B are sectional structural views taken along lines X-X′ inthe corresponding figures suffixed with A; figures suffixed with C aresectional structural views taken along lines Y1-Y1′ in the correspondingfigures suffixed with A; figures suffixed with D are sectionalstructural views taken along lines Y2-Y2′ in the corresponding figuressuffixed with A; and figures suffixed with E are sectional structuralviews taken along lines Y3-Y3′ in the corresponding figures suffixedwith A. The production method according to the third embodiment is thesame as in the steps according to the first embodiment in FIGS. 2AA to2XE except for the following differences.

After the steps in FIG. 2AA to FIG. 2TE in the first embodiment arecarried out, as illustrated in FIGS. 4AA to 4AE, contact holes 59 a, 59b, and 59 c are formed so as to extend to the Si pillars 6 a, 6 b, and 6c. Similarly, a contact hole 59 d is formed so as to extend to the N⁺layer 8 cc. Similarly, a contact hole 59 e is formed so as to extend tothe P⁺ layer 8 aa. Similarly, a contact hole 59 f is formed so as toextend to the N⁺ layer 8 bb. Similarly, a contact hole 59 g is formed soas to extend to the TiN layer 18 a.

Subsequently, as illustrated in FIGS. 4BA to 4BE, a W layer (not shown)is deposited into the contact holes 59 a, 59 b, 59 c, 59 d, 59 e, 59 f,and 59 g and over the whole structure. Subsequently, the whole structureis polished by a MCP process, to thereby form W layers 61 a, 61 b, 61 c,61 d, 61 e, 61 f, and 61 g in the contact holes 59 a, 59 b, 59 c, 59 d,59 e, 59 f, and 59 g. Thus, the surfaces of the top portions of the Wlayers 43 aa, 43 bb, 54 aa, 54 bb, 61 a, 61 b, 61 c, 61 d, 61 e, 61 f,and 61 g are at the same level.

Subsequently, as illustrated in FIGS. 4CA to 4CE, the steps in FIG. 2UAto FIG. 2XE in the first embodiment are basically carried out except forthe contact holes 59 a, 59 b, 59 c, 59 d, 59 e, 59 f, and 59 g, tothereby form a power supply wiring metal layer VDD, which connectsthrough the contact hole 45 a to the W layer 61 a; a ground wiring metallayer VSS, which connects through the contact hole 45 b to the W layer61 b; a bit line wiring metal layer BL, which connects through thecontact hole 49 a to the W layer 61 c; an inverted bit line wiring metallayer BLR, which connects through the contact hole 49 b to the W layer61 d; a ground wiring metal layer VSS, which connects through thecontact holes 45 b and 45 d to the W layers 61 b and 61 f; and a wordline wiring metal layer WL, which connects through the contact hole 47to the W layer 61 g. As a result, the same SRAM cell as in the firstembodiment is formed.

The production method for the SGT-including pillar-shaped semiconductordevice according to the third embodiment provides the followingadvantages.

In the first embodiment, the bottoms of the contact holes 45 a, 45 b, 45c, 47, 49 a, and 49 b are at different levels. By contrast, in the thirdembodiment, the bottoms of the contact holes 45 a, 45 b, 45 c, 47, 49 a,and 49 b are at the level of the surfaces of the top portions of the Wlayers 43 aa, 43 bb, 54 aa, 54 bb, 61 a, 61 b, 61 c, 61 d, 61 e, 61 f,and 61 g. This facilitates formation of the wiring metal layers VDD,VSS, BL, BLR, and WL in the contact holes 45 a, 45 b, 45 c, 47, 49 a,and 49 b. For example, as in CPU chips, when a logical circuit is formedon a chip having the SRAM cell region, the wiring metal layers formedare, in total, several tens of layers. For this reason, also in theformation of logical circuit portions, the contact holes connecting tothe wiring metal layers can be formed such that the bottoms of thecontact holes are at the same level, which leads to high-densityformation of the wiring metal layers.

Incidentally, the first embodiment describes the SGT-including SRAM cellcircuit as an example. However, the present invention is also applicableto formation of other SGT-including circuits. SGTs have a feature ofproviding a high-density structure in the formation of a circuit. Thus,for example, as described in the first embodiment, the followingelements are formed so as to partially overlap in plan view: the powersupply wiring metal layer VDD, the ground wiring metal layer VSS, thebit line wiring metal layer BL, and the inverted bit line wiring metallayer BLR, which are individually disposed in a horizontal direction andconnect to some of the N⁺ layers 31 b, 31 c, 32 b, and 32 c and the P⁺layers 31 a and 32 a within the Si pillars 6 a, 6 b, and 6 c, and the N⁺layers 38 b and 38 c and the P⁺ layer 38 a in the top portions of the Sipillars 6 a, 6 b, and 6 c; the NiSi layers 28 aa, 28 bb, 36 a, and 36 b,which are wiring conductor layers disposed in a horizontal direction andconnect to the gate TiN layers 18 c, 18 d, and 18 e surrounding theouter peripheries of the Si pillars 6 a, 6 b, and 6 c; and the gate TiNlayers 18 a and 18 b disposed in a horizontal direction. Suchoverlapping between wiring conductor layers in plan view similarlyoccurs in formation of other SGT-including circuits. Thus, the presentinvention provides the same advantages in formation of otherSGT-including circuits. The same applies to other embodiments accordingto the present invention.

Incidentally, in the first embodiment, the source impurity regions inthe bottom portions of the Si pillars 6 a, 6 b, and 6 c and wiringconductor layer portions extending horizontally therefrom, whichconstitute the source P⁺ layer 8 aa and the N⁺ layers 8 bb and 8 cc ofthe lower SGTs, are formed as the layers of the same material.Alternatively, for example, the wiring conductor layer portions may beformed of silicide or metal or other semiconductor layers formed ofSiGe, for example, and containing donor or acceptor impurity at highconcentration. Portions of wiring conductor layer portions may be formedof silicide or metal or semiconductor layers containing donor oracceptor impurity at high concentration; and, to these, other wiringmaterial layers may be connected. The semiconductor layers containingdonor or acceptor impurity at high concentration may connect to the sidesurfaces of the Si pillars and may be formed of single-crystalsemiconductor layers. The same applies to other embodiments according tothe present invention.

In the first embodiment, the contact holes 40 a and 40 c are formed in aregion where, in plan view, the NiSi layer 28 aa as a lower wiringconductor layer, the NiSi layer 28 bb as an intermediate wiringconductor layer, and the NiSi layer 36 a as an upper wiring conductorlayer are formed so as to overlap. In this case, the NiSi layer 28 aaconnects to the drain N⁺ layer 31 b of a lower SGT; the NiSi layer 28 bbis connected to the drain N⁺ layer 32 b of an upper SGT; and the NiSilayer 36 a is connected to the gate TiN layer 18 d of an upper SGT.Thus, depending on the design of an SGT-including circuit, thecombination of the source impurity regions, the drain impurity regions,and the gate conductor layers of SGTs that connect to the upper wiringconductor layer, the intermediate wiring conductor layer, and the lowerwiring conductor layer can be appropriately changed. Such changesapplied in accordance with the circuit design include a configuration inwhich an upper wiring conductor layer, an intermediate wiring conductorlayer, and a lower wiring conductor layer connect to the source impurityregion, drain impurity region, and gate conductor layer of another Sipillar. The same applies to other embodiments according to the presentinvention.

In the first embodiment, in plan view, the contact holes 40 a and 40 care formed such that the whole outer peripheries thereof overlap theNiSi layer 28 aa serving as a lower wiring conductor layer, the NiSilayer 28 bb serving as an intermediate wiring conductor layer, and theNiSi layer 36 a serving as an upper wiring conductor layer. By contrast,another structure also provides the effect of an increase in the densityof an SGT circuit: in the structure, in plan view, portions of the wholeperipheries of the contact holes 40 a and 40 c overlap the NiSi layer 28aa serving as a lower wiring conductor layer, the NiSi layer 28 bbserving as an intermediate wiring conductor layer, and the NiSi layer 36a serving as an upper wiring conductor layer.

In the first embodiment, the NiSi layer 28 bb in which a side surface isinsulated with the SiO₂ layer 41 a has a side surface positioned, inplan view, at the outer periphery of the contact hole 40 a.Alternatively, the NiSi layer 28 bb may have a side surface extendingoutside of the contact hole 40 a. This configuration enables a decreasein the capacitance between the NiSi layers 28 aa and 28 bb. Similarly,the NiSi layer 28 aa in which a side surface is insulated with the SiO₂layer 41 b has a side surface positioned, in plan view, at the outerperiphery of the contact hole 40 b. Alternatively, the NiSi layer 28 aamay have a side surface extending outside of the contact hole 40 b. Thisconfiguration enables a decrease in the capacitance between the NiSilayer 28 aa and the TiN layer 18 a. This configuration is also effectivein the formation of circuits other than SRAM cell circuits. The sameapplies to other embodiments according to the present invention.

The vertical NAND-type flash memory circuit includes plural memory cellsstacked in the vertical direction, the memory cells each including asemiconductor pillar as the channel and including, around thesemiconductor pillar, a tunnel oxide layer, a charge storage layer, aninterlayer insulating layer, and a control conductor layer.Semiconductor pillars at both ends of these memory cells include asource line impurity layer corresponding to a source, and a bit lineimpurity layer corresponding to a drain. In addition, when one of memorycells on both sides of a memory cell functions as a source, the otherfunctions as a drain. Thus, the vertical NAND-type flash memory circuitis one of SGT circuits. Therefore, the present invention is alsoapplicable to NAND-type flash memory circuits.

In the first embodiment, the wiring metal layers 55 a and 55 b areformed on the W layers 43 aa, 43 bb, 54 aa, and 54 bb; however,formation of the wiring metal layers 55 a and 55 b may be omitted. Thesame applies to other embodiments according to the present invention.

In the first embodiment, the SiO₂ layers 46 a and 46 b are etchedthrough the AlO layer 51 serving as an etching mask while the W layers43 a and 43 b are left. However, as long as selective etching of formingthe top portion of the lead-out wiring and an etching mask surroundingthe top portion with a surrounding space therebetween can be performed,the materials of the lead-out wiring (a W layer is used in the firstembodiment), the etching mask (an AlO layer is used in the firstembodiment), and the layer to be removed (a SiO₂ layer is used in thefirst embodiment) and the etching method can be appropriately selected.In the first embodiment, in the subsequent step, in order to etch theSiO₂ layers 39 and 37 and the like, the AlO layer 51 is used as theetching mask; however, another material layer that serves as such anetching mask can be used. The same applies to other embodimentsaccording to the present invention.

In the first embodiment, the contact holes 40 a and 40 b are formed soas to extend from the SiO₂ layer 39 as the uppermost layer to the uppersurfaces of the NiSi layer 28 aa and the TiN layer 18 a. However,overetching for the contact holes 40 a and 40 b may be obviously carriedout such that the contact holes 40 a and 40 b extend from the SiO₂ layer39 into the NiSi layer 28 aa and the TiN layer 18 a. The same applies toother embodiments according to the present invention.

In the first embodiment, two SGTs are formed in each of the Si pillars 6a, 6 b, and 6 c. However, the present invention is also applicable toformation of a circuit in which one or three or more SGTs are formed.Similarly, this is also applicable to other embodiments according to thepresent invention.

In the first embodiment, silicide is formed in the P-type poly-Si layers22 a and 22 b and N⁺-type poly-Si layers 26 a and 26 b due to Ni atomsin the Ni layers 21 a and 21 b, to thereby make the NiSi layers 28 a and28 b protrude into the spaces 25 a, 25 b, and 25 c. Instead of the Nilayers 21 a and 21 b, layers of another metal such as titanium (Ti) orcobalt (Co) may be employed to achieve protrusion of silicide layersinto the spaces 25 a, 25 b, and 25 c. Alternatively, silicide layershaving a high content of metal atoms may be formed by, for example,sputtering deposition, and subsequently the silicide layers may be madeto protrude into the spaces 25 a, 25 b, and 25 c. Alternatively, anothermethod may be employed to form connections between the N⁺ layers 31 b,31 c, 32 b, and 32 c and the P⁺ layers 31 a and 32 a, and the NiSilayers 28 aa, 28 bb, 36 a, and 36 b, which are wiring conductor layershorizontally disposed and connect to the gate TiN layers 18 c, 18 d, and18 e surrounding the outer peripheries of the Si pillars 6 a, 6 b, and 6c. Similarly, this is also applicable to other embodiments according tothe present invention.

In the first embodiment, the SiO₂ layers 41 a and 41 c are formed on theside surfaces (facing the side surfaces of the contact holes 40 a and 40b) of the NiSi layers 36 a and 28 bb, which are upper wiring conductorlayers. Alternatively, overetching may be carried out by RIE etching tothereby remove the SiO₂ layers 41 a and 41 c from the side surfaces ofthe NiSi layers 36 a and 28 bb. Similarly, this is also applicable toother embodiments according to the present invention.

The first embodiment describes a configuration in which the Si pillars 6a, 6 b, and 6 c are formed on the SiO₂ layer substrate 1 to form theSRAM cell circuit. Alternatively, instead of the SiO₂ layer substrate 1,another substrate such as an SOI (Silicon on Insulator) substrate or aSi substrate may be employed. In the case of employing a Si substrate,well structures may be formed in the surface layer of the Si substrate,the well structures corresponding to the N⁺ layer or P⁺ layerfunctioning as the source or drain in the bottom portions of the Sipillars 6 a, 6 b, and 6 c. Similarly, this is also applicable to otherembodiments according to the present invention.

In the first embodiment, the W layers 43 aa, 43 bb, 54 aa, and 54 bb maybe other conductor layers or may be constituted by plural conductorlayers including a barrier layer, for example. Other material layers maybe used in combination as long as properties intended in this embodimentare provided. The same applies to other embodiments according to thepresent invention.

In the first embodiment, formation of connections between the sidesurfaces of the Si pillars 6 a, 6 b, and 6 c and the NiSi layers 28 aaand 28 bb, formation of the NiSi layers 30 a, 30 b, 30 c, 32 a, 32 b,and 32 c within the Si pillars 6 a, 6 b, and 6 c, and formation of theP⁺ layers 31 a and 33 a and the N⁺ layers 31 b, 31 c, 33 b, and 33 c arecarried out by a heat treatment in FIGS. 2KA to 2KD. These formation ofconnections between the side surfaces of the Si pillars 6 a, 6 b, and 6c and the NiSi layers 28 aa and 28 bb, formation of the NiSi layers 30a, 30 b, 30 c, 32 a, 32 b, and 32 c within the Si pillars 6 a, 6 b, and6 c, and formation of the P⁺ layers 31 a and 33 a and N⁺ layers 31 b, 31c, 33 b, and 33 c, are achieved at any appropriate timing by the finalstep for the production of the SGTs. The same applies to otherembodiments according to the present invention.

The first embodiment describes a configuration employing the SiN layers15 and 35, which are layers formed of a single material. Alternatively,composite material layers may be employed, for example, a compositematerial layer including a lower portion that is a SiO₂ layer and anupper portion that is a SiN layer. Alternatively, instead of the SiNlayers 15 and 35, insulating material layers having a low diffusioncoefficient of HF ions may be employed. This is also applicable to otherembodiments according to the present invention.

The above embodiments describe examples in which semiconductor regionssuch as channels, sources, and drains in the semiconductor pillars areformed of Si (silicon). However, this does not limit the presentinvention. The technical idea of the present invention is alsoapplicable to SGT-including semiconductor devices that employSi-containing semiconductor materials such as SiGe, or semiconductormaterials other than Si.

The first embodiment relates to a configuration in which the gateconductive layers are the TiN layers 18 a, 18 b, 18 c, and 18 d.However, the gate conductive layers are not limited to this example andmay be formed of another metal material. Alternatively, the gateconductive layers may have a multilayer structure including a metallayer and, for example, a poly-Si layer. Similarly, this is alsoapplicable to other embodiments according to the present invention.

In the third embodiment, in all the contact holes 59 a, 59 b, 59 c, 59d, 59 e, 59 f, and 59 g, as with the W layers 43 aa, 43 bb, 54 aa, and54 bb, the W layers 61 a, 61 b, 61 c, 61 d, 61 e, 61 f, and 61 g areformed. These layers may not be necessary formed for all the contactholes and may be formed in regions that contribute to an increase in thedensity of the circuits.

In the first embodiment, for example, in an SGT including the N⁺ layers8 bb and 31 b serving as the source and the drain, these layers areformed of impurity regions containing the same donor impurity.Alternatively, this SGT may be formed as a tunnel effect SGT includingimpurity regions of different conductivity types. The same applies tothe other SGTs. Similarly, this is also applicable to other embodimentsaccording to the present invention.

The present invention encompasses various embodiments and variousmodifications without departing from the broad spirit and scope of thepresent invention. The above-described embodiments are provided forunderstanding of examples of the present invention and do not limit thescope of the present invention. Features of the above-described examplesand modifications can be appropriately combined. The above-describedembodiments from which some optional features have been eliminateddepending on the need still fall within the spirit and scope of thepresent invention.

Methods for producing SGT-including pillar-shaped semiconductor devicesaccording to embodiments of the present invention provide highlyintegrated semiconductor devices.

What is claimed is:
 1. A method for producing a pillar-shaped semiconductor device, the method comprising: a step of providing a stack structure including a semiconductor structure including at least one semiconductor pillar formed on a substrate so as to be perpendicular to a surface of the substrate, a gate insulating layer formed so as to surround an outer periphery of the at least one semiconductor pillar, a gate conductor layer formed so as to surround the gate insulating layer, a first impurity region connected to the at least one semiconductor pillar, and a second impurity region connected to the at least one semiconductor pillar so as to be separated from the first impurity region, and a first wiring conductor layer, a second wiring conductor layer, and a third wiring conductor layer that individually connect to any one of the gate conductor layer, the first impurity region, and the second impurity region of the semiconductor structure, that extend in a horizontal direction along the surface of the substrate, that at least partially overlap in plan view, and that are present in this order from a lower level to a higher level; a step of forming a first contact region that extends through the third wiring conductor layer and the second wiring conductor layer to an upper surface or inside of the first wiring conductor layer; a step of forming a first tubular insulating layer in a portion that is on a side surface of the first contact region and is on a side surface of the second wiring conductor layer; a step of filling the first contact region to form a first conductor layer; a step of exposing a top portion of the first conductor layer and subsequently forming a first material layer so as to surround the top portion of the first conductor layer; a step of forming a first insulating layer over an entirety of the stack structure, and subsequently planarizing upper surfaces of the first conductor layer, the first material layer, and the first insulating layer so as to expose upper surfaces of the first conductor layer and the first material layer; a step of removing the first material layer; a step of forming a second contact region, through the first insulating layer serving as a mask, so as to extend to an upper surface of the third wiring conductor layer; and a step of filling the second contact region to form a second conductor layer.
 2. The method for producing a pillar-shaped semiconductor device according to claim 1, further comprising a step of adjusting the first conductor layer and the second conductor layer such that a level of a surface of a top portion of the first conductor layer matches with a level of a surface of a top portion of the second conductor layer.
 3. The method for producing a pillar-shaped semiconductor device according to claim 1, wherein the step of forming the second conductor layer includes filling a conductor material into the second contact region and depositing the conductor material on the first insulating layer, and subsequently subjecting the conductor material to a lithographic process and etching to form a single layer that includes the second conductor layer and a wiring conductor layer connecting to upper surfaces of the first conductor layer and the second conductor layer.
 4. The method for producing a pillar-shaped semiconductor device according to claim 1, further comprising: a step of forming at least one third contact region that is formed, in plan view, in a position other than in the first contact region, that extends downward beyond a surface of the first insulating layer, and that connects to any one of the gate conductor layer, the first impurity region, and the second impurity region; a step of filling the at least one third contact region to form a third conductor layer formed of a conductor material that is the same as in the first conductor layer; and a step of adjusting the first conductor layer and the third conductor layer such that a level of a surface of a top portion of the first conductor layer matches with a level of a surface of a top portion of the third conductor layer.
 5. The method for producing a pillar-shaped semiconductor device according to claim 1, wherein the first wiring conductor layer, the second wiring conductor layer, and the third wiring conductor layer are each formed of metal or alloy or a semiconductor material layer containing acceptor or donor impurity.
 6. The method for producing a pillar-shaped semiconductor device according to claim 1, wherein at least any one of the first wiring conductor layer, the second wiring conductor layer, and the third wiring conductor layer has a single-crystal semiconductor layer that connects to the side surface of the at least one semiconductor pillar and that contains acceptor or donor impurity.
 7. The method for producing a pillar-shaped semiconductor device according to claim 1, wherein, in plan view, a portion of an outer periphery of the first contact hole region overlaps at least any one of the first wiring conductor layer, the second wiring conductor layer, and the third wiring conductor layer. 